Home > Products > Semiconductor > Genesic semiconductor > Commercial Silicon Carbide

Category

Commercial Silicon Carbide

Silicon carbide (SiC), also known as carborundum /k?rb??r?nd?m/, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907, and today SiC is used in semiconductor electronics applications that are high-temperature, or high-voltage, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

IGBT + SiC Rectifier Copack

IGBT + SiC Rectifier Copack


GeneSiC has develped a line hybrid Silicon and Silicon Carbide IGBT copacks and modules. We use the
SiC Schottky Rectifiers

SiC Schottky Rectifiers


GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for volta
SiC Thyristors

SiC Thyristors


Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC
SOT-227

SOT-227


Genesic semiconductor  commercial  silicon  carbide  SOT-227.
Super Junction Transistors

Super Junction Transistors


GeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide "S

Please Complete the short form below and a A&S sales representatives will contact you shortly. Note: Fields labeled with a * are required.
* Product:
* First Name:
* Last Name:
* Company:
  Phone:
   Fax:
*  Email:
*  Inquiry / Comments
*  Code
 
page run: 34.3 ms