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High Temperature Silicon Carbide

Genesic semiconductor High Temperature Silicon Carbide.
High Temperature Silicon Carbide is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907, and today SiC is used in semiconductor electronics applications that are high-temperature, or high-voltage, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
Schottky Rectifiers

Schottky Rectifiers

GeneSiC is developing new and innovative power rectifiers for voltage ratings of 650 V - 10 kV. Sign
Super Junction Transistors

Super Junction Transistors

Genesic semiconductor  high temperature sic Super Junction Transistors.
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