Category

SiC Thyristors

Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications.
IGBT + SiC Rectifier Copack

IGBT + SiC Rectifier Copack


GeneSiC has develped a line hybrid Silicon and Silicon Carbide IGBT copacks and modules. We use the
SiC Schottky Rectifiers

SiC Schottky Rectifiers


GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for volta
SiC Thyristors

SiC Thyristors


Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC
SOT-227

SOT-227


Genesic semiconductor  commercial  silicon  carbide  SOT-227.
Super Junction Transistors

Super Junction Transistors


GeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide "S
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