Category

Super Junction Transistors

GeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide "Super" Junction Transistor (SJT). SJTs are "Super-High" current gain SiC BJTs being developed by GeneSiC in 1200 V - 10 kV ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device require a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.
IGBT + SiC Rectifier Copack

IGBT + SiC Rectifier Copack


GeneSiC has develped a line hybrid Silicon and Silicon Carbide IGBT copacks and modules. We use the
SiC Schottky Rectifiers

SiC Schottky Rectifiers


GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for volta
SiC Thyristors

SiC Thyristors


Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC
SOT-227

SOT-227


Genesic semiconductor  commercial  silicon  carbide  SOT-227.
Super Junction Transistors

Super Junction Transistors


GeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide "S
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